Semiconductor device with strain

ABSTRACT

A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active regions in the p-MOS region; a p-MOS gate electrode structure formed above the semiconductor substrate, traversing the p-MOS active region and defining a p-MOS channel region under the p-MOS gate electrode structure; a compressive stress film selectively formed above the p-MOS active region and covering the p-MOS gate electrode structure; and a stress released region selectively formed above the element isolation region in the p-MOS region and releasing stress in the compressive stress film, wherein a compressive stress along the gate length direction and a tensile stress along the gate width direction are exerted on the p-MOS channel region. The performance of the semiconductor device can be improved by controlling the stress separately for the active region and element isolation region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of application Ser. No. 10/970,160filed on Oct. 22, 2004, which is based on and claims priority ofJapanese Patent Application No. 2004-191405 filed on Jun. 29, 2004, theentire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

A) Field of the Invention

The present invention relates to a semiconductor device, and moreparticularly to a semiconductor device having a contact etch stopperfilm having stress therein and formed above a semiconductor substrate.

B) Description of the Related Art

There are high demands for high integration and high speed ofsemiconductor integrated circuit devices. High integration and highspeed have been achieved conventionally by reducing the size of a MOSfield effect transistor (FET) which is a main constituent element of asemiconductor integrated circuit device. Miniaturization can obviouslyimprove the integration degree and a shortened gate length can increasean operation speed. Miniaturization has been supported by lithographytechnologies of transferring a design pattern to a resist film. Therequested minimum patterning size has become recently a size smallerthan the wavelength of light used by lithography, and furtherminiaturization of MOSFETs is becoming difficult.

A field effect transistor using a silicon oxide film on a semiconductorsubstrate as the gate insulating film (even by using not metal butsemiconductor silicon as the gate electrode) has been called a MOSFET.As FETs are made fine, some structures have been adopted such as thestructure that a silicon oxynitride film is used as the gate insulatingfilm and the structure that a high dielectric constant insulating filmof HfO₂ or the like stacked on a silicon oxide film is used as the gateinsulating film. In this specification, FET having a gate insulatingfilm made of insulators other than silicon oxide is also called MOSFET.Namely, MOSFET is intended to mean a semiconductor field effecttransistor having an insulated gate electrode.

Most of semiconductor integrated circuit devices aiming at low powerconsumption use a complementary (C) MOSFET (abbreviated to CMOS)constituted of an n-channel MOSFET (n-MOSFET) and a p-channel MOSFET(p-MOSFET). In order to realize high speed of a CMOS integrated circuit,it is desired to improve the performance of both n-MOSFET and p-MOSFET.

A non-patent document No. 1 “IEDM 2000 Tech. Dig., p. 247” by Ito et alreports that as a compressive stress in a contact etch stopper film ismade large, which film is a silicon nitride film formed byplasma-enhanced (PE) chemical vapor deposition (CVD) and a compressivestress film, a compressive stress is exerted along a gate lengthdirection so that an on-current of p-MOS increases and an on-current ofn-MOS decreases.

A non-patent document No. 2 “IEDM 2000 Tech. Dig., p. 575” by Ootsuka etal reports that as a tensile stress in a contact etch stopper film ismade large, which film is a silicon nitride film formed by thermal CVDand a tensile stress film, a tensile stress is exerted along a gatelength direction so that an on-current of n-MOS increases and anon-current of p-MOS decreases.

The compressive stress film is a film formed on an underlying siliconsubstrate in a compressed state. The compressive stress film has acompressive stress therein. The tensile stress film is a film formed onan underlying substrate in a stretched state. The tensile stress filmhas a tensile stress therein.

As described above, as the inner stress of a contact etch stopper filmis increased, the on-current increases in one of an n-MOSFET and ap-MOSFET and decreases in the other so that the increase and decreaseare canceled out and there is the tendency that the performance of thewhole CMOS cannot be improved.

A non-patent document No. 3 “IEDM 2001 Tech. Dig., p. 433” by Shimizu etal reports that a silicon nitride film having a strong stress therein isused as a contact etch stopper film and Ge ions are implanted into aMOSFET region of a conductivity type of reducing an on-current torelease the stress. If the contact etch stopper film is made of asilicon nitride film having a strong compressive stress formed byPE-CVD, Ge ions are implanted in the n-MOS region. If the contact etchstopper film is made of a silicon nitride film having a strong tensilestress formed by thermal CVD, Ge ions are implanted in the p-MOS region.It is possible to suppress a reduction in the on-current of MOSFET whoseperformance is otherwise degraded and to improve the performance of thewhole CMOS.

A non-patent document No. 4 “SSDM 2002, p. 14” by Kumagai et al and apatent document No. 1, Japanese Patent Publication No. 2003-86708,disclose that if the gate length direction is disposed along the <110>direction on an Si (001) plane, the on-current of n-MOS increases by thetensile stress along the gate length direction and decreases by thetensile stress along a gate width direction, whereas the on-current ofp-MOS decreases by the tensile stress along the gate length direction(increases by the compressive stress along the gate length direction)and decreases by the tensile stress along the gate width direction.

The patent document No. 1, Japanese Patent Publication No. 2003-86708,further discloses that a contact etch stopper film is made of a tensilestress film and disposed in an n-MOS region, and a contact etch stopperfilm is made of a compressive stress film and disposed in a p-MOSregion, to improve the performance of the whole CMOS and to adjust thestress by the area of each contact etch stopper film.

A patent document No. 2, Japanese Patent Publication No. 2003-273240,discloses that in the state that the semiconductor surface between agate insulating film and an element isolation region is covered with aninsulating film functioning as a contact etch stopper film, a tensilestress film is formed in an n-MOS region and a compressive stress filmis formed in a p-MOS region.

SUMMARY OF THE INVENTION

An object of this invention is to provide a semiconductor device whoseperformance is improved by utilizing stress.

Another object of this invention is to provide a semiconductor devicewhose performance is improved by controlling stress along a gate lengthdirection and a gate width direction.

Still another object of this invention is to provide a semiconductordevice whose performance is improved by controlling stress separatelyfor an active region and an element isolation region.

According to one aspect of the present invention, there is provided asemiconductor device comprising: a semiconductor substrate having ap-channel MOSFET (p-MOS) region; an element isolation region formed in asurface portion of the semiconductor substrate, the element isolationregion defining p-MOS active regions in the p-MOS region; a p-MOS gateelectrode structure formed above the semiconductor substrate, traversingan intermediate portion of the p-MOS active region and defining a p-MOSchannel region under the p-MOS gate electrode structure; a first contactetch stopper film having a compressive stress selectively formed abovethe p-MOS active region and covering the p-MOS gate electrode structure;and a stress released region selectively formed above the elementisolation region in the p-MOS region and releasing stress in the firstcontact etch stopper film, wherein the first contact etch stopper filmon the p-MOS active region exerts a compressive stress on the p-MOSchannel region along a gate length direction, and the first contact etchstopper film and the stress released region exert a tensile stress onthe p-MOS channel region along a gate width direction.

According to another aspect of the present invention, there is provideda semiconductor device comprising: a semiconductor substrate having ap-channel MOSFET (p-MOS) region; an element isolation region formed in asurface portion of the semiconductor substrate, the element isolationregion defining p-MOS active regions in the p-MOS region; a p-MOS gateelectrode structure formed above the semiconductor substrate, traversingan intermediate portion of the p-MOS active region and defining a p-MOSchannel region under the p-MOS gate electrode structure; a secondcontact etch stopper film having a tensile stress, selectively formedabove the element isolation region in the p-MOS region, and a thirdcontact etch stopper film selectively formed in the p-MOS active regionand covering the p-MOS gate electrode structure, the third contact etchstopper film being made of the same film as the second contact etchstopper film and stress in the third contact etch stopper film beingreleased, wherein the second contact etch stopper film on the elementisolation region in the p-MOS region exerts the tensile stress on thep-MOS channel region along the gate width direction.

The performance of MOSFET can be improved by stress along the gatelength direction and gate width direction exerted on the channel region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a table summarizing the type of stress capable of increasingan on-current of a CMOS circuit and FIG. 1B to 1E are schematic crosssectional views showing stresses generated when a film having stresstherein is patterned.

FIGS. 2A to 2H are cross sectional views and plan views showing stressescapable of being generated when a tensile stress film is formed on aMOSFET.

FIGS. 3A to 3H are cross sectional views and plan views showing stressescapable of being generated when a compressive stress film is formed on aMOSFET.

FIG. 4A is a table showing the type of stress capable of being generatedwhen a compressive stress film and a tensile stress film are selectivelyformed by dividing a MOS region into an active region and an STI region,and FIG. 4B is a plan view showing a layout example of contact plugs.

FIGS. 5A to 5D are cross sectional views and a plan view of asemiconductor device according to a first embodiment.

FIGS. 6A to 6F are cross sectional views and plan views showingmodifications of the first embodiment.

FIGS. 7A to 7D are cross sectional views and a plan view of asemiconductor device according to a second embodiment.

FIGS. 8A to 8F are cross sectional views and plan views showingmodifications of the second embodiment.

FIGS. 9A to 9D are cross sectional views and a plan view of asemiconductor device according to a third embodiment.

FIGS. 10A to 10D are cross sectional views and a plan view of asemiconductor device according to a fourth embodiment.

FIGS. 11A to 11C are cross sectional views and a plan view of asemiconductor device according to a fifth embodiment.

FIG. 12 is a table summarizing the characteristics of the first to fifthembodiments.

FIG. 13 is a plan view illustrating an application example of eachembodiment to a semiconductor integrated circuit device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present inventor calculated a stress distribution by depositing acontact etch stopper film having tensile stress on a silicon substrateand partially etching it. It has been found that stress exerted on thesilicon substrate is negligible if a stress film is deposited on a flatsurface, and that stress is exerted on the silicon substrate if thestress film is partially removed or bent upward or the like.

It has been found that a lateral compressive stress perpendicular to theborder of the contact etch stopper film is generated near the surface ofthe silicon substrate in the region where the contact etch stopper filmhaving the tensile stress is removed, and that a lateral tensile stressperpendicular to the border of the contact etch stopper film isgenerated near the surface of the silicon substrate in the region wherethe contact etch stopper film having the tensile stress is removed.

FIG. 1A is the table summarizing the type (tensile stress, compressivestress) of stress which increases the on-current of an n-MOSFET and ap-MOSFET of CMOS, relative to a gate length direction, a depth directionand a gate width direction. Stress along the depth direction iscomplementary with stress along the gate length direction. As disclosedin the non-patent document No. 4 and patent document No. 1, the tensilestress both along the gate length direction and gate width directionincreases the on-current of n-MOSFET, whereas the on-current of p-MOSFETis increased by the compressive stress along the gate length directionand decreased by the tensile stress along the gate width direction.

FIGS. 1B to 1E are schematic cross sectional views illustrating thestudies made by the present inventor. As shown in FIG. 1B, a tensilestress film TS is formed on a flat surface of a silicon substrate Sub.For example, the tensile stress film is a film formed by thermal CVD.Stress is not generated in the silicon substrate Sub.

As shown in FIG. 1C, the tensile stress film TS shown in FIG. 1B ispartially and selectively removed to leave tensile stress film patternsTS1 and TS2 defined by stress released portions V1, V2 and V3. Thestress released portion is a region where the stress is released, and isformed by removing the film or by releasing stress in the film byleaving the film. For example, Ge ions are implanted to release thestress. The tensile stress film pattern TS1 is sandwiched between thestress released portions V1 and V2 and the tensile stress film patternTS2 is sandwiched between the stress released portions V2 and V3.

As the tensile stresses in the stress released portions V1, V2 and V3are released, the stresses stretching outward the left tensile stressfilm patterns TS1 and TS2 are extinguished so that the tensile stressfilm patterns TS1 and TS2 tend to shrink as indicated by arrows. Thisforce exerts the compressive stress on the silicon substrate Sub underthe tensile stress film patterns TS1 and TS2. Since a stress stretchingoutward is generated on both sides of the stress released portion V2, atensile stress is exerted on the silicon substrate Sub.

In MOSFET, a contact etch stopper film having a tensile stress thereinis formed covering the gate electrode. This contact etch stopper filmbends toward the direction of spacing apart from the silicon substrateabove the channel region, so that it has the structure corresponding tothe stress released portion. The tensile stress film on both sides ofthe gate electrode exerts the tensile stress on the channel region,similar to the stress released portion.

As shown in FIG. 1D, a compressive stress film CS is formed on a flatsurface of a silicon substrate Sub. For example, the tensile stress filmis a silicon nitride film formed by plasma-enhanced (PE) CVD. Stress isnot generated in the silicon substrate Sub whose whole surface iscovered with the compressive strain film CS.

As shown in FIG. 1E, the compressive stress film CS shown in FIG. 1D ispartially and selectively removed to leave compressing stress filmpatterns CS1 and CS2 defined by stress released portions V1, V2 and V3whose compressive stresses are released. The compressive stress filmpattern CS1 is sandwiched between the stress released portions V1 and V2and the compressive stress film pattern CS2 is sandwiched between thestress released portions V2 and V3.

As the compressive stresses in the stress released portions V1, V2 andV3 are released, the stresses of compressing the left compressive stressfilm patterns CS1 and CS2 are extinguished so that the compressivestress film patterns CS1 and CS2 tend to expand as indicated by arrows.This force exerts the tensile stress on the silicon substrate Sub underthe compressive stress film patterns CS1 and CS2. Since a stressdirecting inward is generated on both sides of the stress releasedportion V2, a compressing stress is exerted on the silicon substrateSub.

In MOSFET, a contact etch stopper film having a compressive stresstherein is formed covering the gate electrode. Since this contact etchstopper film bends toward the direction of spacing apart from thesilicon substrate above the channel region, a compressive stain isexerted on the channel region, similar to the stress released portion.

If ion implantation is to be performed to release stress, atoms or anatom group to be used for ion implantation are preferably such atoms oran atom group which will not electrically influence even it enterssilicon. If a silicon substrate is used, homolog elements such as Ge andC or inert elements such as Ar may be used.

FIGS. 2A to 2H are cross sectional views and plan views showing stressescapable of being generated when a tensile stress film is formed on aMOSFET.

FIGS. 2A and 2B are a cross sectional view and a plan view showing thestate that a tensile stress film is formed on the whole MOSFET region.An element isolation region STI formed by shallow trench isolation (STI)is formed in the surface layer of a silicon substrate to define activeregions AR. An insulated gate electrode G is formed on the surface ofthe active region AR, and side wall spacers SW are formed on the sidewalls of the insulated gate electrode G. A tensile stress film TS(including TS1 and TS2) is formed covering the insulated gate electrodestructure. In the plan view, the side wall spacers SW are not shown andare omitted, this being applicable to the succeeding drawings.

Although the tensile stress films TS1 and TS2 are in contact with thesubstrate surface on both sides of the insulated gate electrodestructure, the tensile stress film on the insulated gate electrodestructure is spaced apart from the substrate surface, constituting astress released portion V2. Therefore, the tensile stress film patternsTS1 and TS2 tending to shrink exert stresses as indicated by arrows, andthe surface of the silicon substrate (channel region) under theinsulated gate electrode receives a force directed outward so that thetensile stress is exerted on the channel region.

FIGS. 2C and 2D are a cross sectional view and a plan view showing thestate that a tensile stress film is formed only on the active region inthe MOSFET region and removed from the element isolation region STI. Theelement isolation region STI, active region AR, insulated gate electrodeG and side wall spacers SW are similar to those shown in FIGS. 2A and2B. The tensile stress film TS is formed and the tensile stress film TSon the element isolation region STI is removed. Stress released portionsV1 and V3 with the tensile stress film being removed are indicated bybroken lines in FIG. 2D.

In the active regions on both sides of the insulated gate electrodestructure, tensile stress film patterns TS1 and TS2 contact thesubstrate surface, and on the insulated gate electrode structure or inthe element isolation region STI, the tensile stress film is spacedapart from the substrate surface or removed, respectively, to formstress released portions V1, V2 and V3. Therefore, the tensile stressfilm patterns TS1 and TS2 tending to shrink exert stresses outward onboth sides of the insulated gate electrode G as indicated by arrows, andthe tensile stress is exerted on the channel region under the insulatedgate electrode G along the gate length direction.

Along the width direction of the insulated gate electrode G, a forcedirecting toward the inner side of the active region is exerted so thata compressive stress is exerted along the gate width direction.

FIGS. 2E and 2F are a cross sectional view and a plan view showing thestate that a tensile stress film is formed only on the element isolationregion STI in the MOSFET region and removed from the active region. Thetensile stress film TS is formed covering the insulated gate electrodestructure constituted of the insulated gate electrode G on the siliconsurface and the side wall spacers SW on the side walls, and is removedin the active region. The region where the tensile stress film isremoved is indicated by a broken line. The other points are similar tothose shown in FIGS. 2A to 2D.

The tensile stress film left only on the element isolation region STItends to shrink so that the stress directing outward near the peripheryof the active region AR is exerted. A force directing toward the outsideof the active region is exerted along the width direction of theinsulated gate electrode G so that the tensile stress is exerted alongthe gate width direction.

FIGS. 2G and 2H are a cross sectional view and a plan view showing thestate that a tensile stress film formed in the MOSFET region iscompletely removed. A stress will not be exerted because the tensilestress film is completely removed. If this film is removed actually,forming the film is meaningless. However, as described earlier, if ionsare implanted into the film to release stresses, this process providesthe same effect as removing the film in terms of stress.

If the stress film is made of a contact etch stopper film, the stressfilm on the element isolation region may be removed or may be left byreleasing stresses by ion implantation. The stress film is left on theactive region by releasing stresses by ion implantation, because thecontact etch stopper film is required to be left on the active region.

FIGS. 3A to 3H are schematic cross sectional views and plan viewsshowing the state that a compressive stress film is formed on MOSFET.

FIGS. 3A and 3B are a cross sectional view and a plan view showing thestate that a compressive stress film is formed on the whole MOSFETregion. The compressive stress film CS is formed covering the insulatedgate electrode structure constituted of an insulated gate electrode G ona silicon surface and side wall spacers SW on the side walls. Althoughcompressive stress films CS1 and CS2 are in contact with the substratesurface on both sides of the insulated gate electrode structure, thecompressive stress film on the insulated gate electrode structure isspaced apart from the substrate surface, constituting a stress releasedportion V2. Therefore, the tensile stress film patterns CS1 and CS2tending to extend exert stresses as indicated by arrows, and the surfaceof the channel region under the insulated gate electrode receives aforce directed inward so that the compressive stress is exerted on thechannel region.

FIGS. 3C and 3D are a cross sectional view and a plan view showing thestate that a compressive stress film is formed only on the active regionin the MOSFET region and stresses are released from the compressivestress film on the element isolation region STI. The compressive stressfilm CS is formed covering the insulated gate electrode structureconstituted of an insulated gate electrode G on a silicon surface andside wall spacers SW on the side walls, and stresses are released fromthe compressive stress film on the element isolation region STI. Theregion where the compressive stress film is removed is indicated bybroken lines.

In the active region on both sides of the insulated gate electrodestructure, compressive stress film patterns CS1 and CS2 contact thesubstrate surface, and on the insulated gate electrode structure or inthe element isolation region STI, the compressive stress film is spacedapart from the substrate surface, or removed or released from stresses,respectively, to form stress released portions V1, V2 and V3. Therefore,the compressive stress film patterns CS1 and CS2 tending to extend exertstresses inward on both sides of the insulated gate electrode G asindicated by arrows, and the compressive stress is exerted on thechannel region under the insulated gate electrode G along the gatelength direction. Along the width direction of the insulated gateelectrode G, a force directing toward the outer side of the activeregion is exerted so that a tensile stress is exerted along the gatewidth direction.

FIGS. 3E and 3F are a cross sectional view and a plan view showing thestate that a compressive stress film is disposed only on the elementisolation region STI in the MOSFET region and the stress in the film onthe active region is released. A compressive film CS is formed coveringthe insulated gate electrode structure constituted of an insulated gateelectrode G on a silicon surface and side wall spacers SW on the sidewalls, and the stress in the film on the active region AR is released.The region where the compressive stress film is removed is indicated bya broken line.

The compressive stress film left only in the element isolation regionSTI tends to extend so that a stress directing inward at the peripheryof the active region AR is exerted. Along the width direction of theinsulated gate electrode G, a force directing toward the inner side ofthe active region is generated so that a compressive stress is exertedalong the gate width direction.

FIGS. 3G and 3H are a cross sectional view and a plan view showing thestate that a compressive stress film formed in the MOSFET region iscompletely removed in terms of stress. A stress will not be exertedbecause the compressive stress film is completely removed.

FIG. 4A is a table summarizing the above-described study results. Thistable shows strains in the gate length direction, depth direction andgate width direction when stresses in a stress film formed in the MOSFETregion are selectively released. Strain in the depth direction iscomplementary with strain in the gate length direction. A stress film isselected from this table in order to obtain desired strains in asemiconductor device. In a MOSFET formed on the (001) plane of a siliconsubstrate and having the <110> direction as the gate length direction,the tensile strain along the gate length direction and gate widthdirection increases the on-current of an n-MOS, and the compressivestrain along the gate length direction and the tensile strain along thegate width direction increase the on-current of a p-MOS.

In order to exert a predetermined (e.g., tensile) stress along the gatelength direction, a stress film having a predetermined (e.g., tensile)stress is formed and stresses in the stress film on the active regionare required to be released. In order to exert a tensile stress alongthe gate width direction, a tensile stress film is formed and stressesin the tensile stress film on the STI region are required to bereleased.

FIG. 4B shows an example of contact plugs. Side wall spacers SW areformed on the side walls of a gate electrode G above the active regionAR, and source/drain diffusion layers 19 are formed in the active regionon both sides of the side wall spacers. For example, a compressivestress film is formed covering the insulated gate electrode structureand stresses are released from the compressive stress film on theelement isolation region STI. Contact holes CH and conductive plugsfilled in the contact holes are formed separately along the gate widthdirection, in the example shown, at two selected positions of each ofthe source/drain diffusion layers, leaving spaces SP on both sides andthe middle of the two positions. Although the compressive stress film incontact with the silicon surface is removed in the region where the sidewall spacer SW and contact hole CH contact, the compressive stress filmis left on the spaces SP. As the compressive stress film on the STIregion is removed, the compressive stress film tends to extend sostresses indicated by arrows are exerted and a desired strain can begiven to the silicon substrate.

FIGS. 5A to 5D are cross sectional views and a plan view showing a CMOSstructure according to the first embodiment. As shown in FIG. 5A, atrench is formed in the surface layer of a (001) plane p-type siliconsubstrate, an insulating layer is buried in the trench and thereafter anunnecessary region is removed to form an element isolation region 12defining active regions by shallow trench isolation (STI). Impurities ofp- and n-types are selectively implanted to form a desired p-well 13 andn-well 14. The surface of the active region is thermally oxidized and ifnecessary nitridized to form a gate insulating film 15.

A polysilicon layer is deposited on the gate insulating film to athickness of, e.g., about 100 nm to form a gate electrode layer. Byusing a resist pattern, the gate electrode layer and gate insulatingfilm are patterned to form an insulated gate electrode G (collectivelyindicating Gn and Gp) having a gate length of, e.g., 50 nm along the<110> direction. Impurities of n- and p-types are selectively implantedinto the active regions on both sides of the insulated gate electrode Gto form an n-type extension Exn and a p-type extension Exp.

An insulating film such as an oxide film is deposited covering theinsulated gate electrode G, and anisotropic etching is performed toleave side wall spacers SW only on the side walls of the insulated gateelectrode G. By using the side wall spacers SW as a mask, n-typeimpurities and p-type impurities are selectively implanted to form ann-type source/drain diffusion layer 18 and a p-type source/draindiffusion layer 19. Impurities are also implanted into the gateelectrodes to form an n-type gate electrode Gn in the n-MOS region and ap-type gate electrode Gp in the p-MOS region. If necessary, a metallayer such as Co capable of being silicidated is deposited and asilicidation process is performed to form silicide layers on the gateelectrode G and source/drain diffusion layers.

Covering the CMOS structure formed in this manner, a contact etchstopper film 21 of a silicon nitride film having a tensile stress isdeposited by thermal CVD. For example, the silicon nitride film 21having a thickness of about 80 nm and a tensile stress of 1.4 GPatherein is formed by thermal CVD under the conditions thatdichlorosilane (DCS)+monosilane (SiH₄)+disilane (Si₂H₆)+Si₂H₄ are flowedat 5 to 50 sccm as silicon source gas, NH₃ is flowed at 500 to 10000sccm as nitrogen source gas, and N₂+Ar are flowed at 500 to 10000 sccmas other gasses, at a pressure of 0.1 to 400 torr and a temperature of500 to 700° C.

FIG. 5B is a plan view corresponding to FIG. 5A. The element isolationregion 12 defines active regions AR1 and AR2 and the insulated gateelectrodes Gn and Gp are formed traversing the central areas of theactive regions. The side wall spacers SW and silicon nitride film 21 areshown omitted. On the nitride film 21 having a tensile stress, a resistfilm is coated, selectively exposed and developed to form a resistpattern PR1 having an opening above the p-MOS active region AR2.

FIG. 5C is a cross sectional view taken along line VC-VC shown in FIG.5B. As shown in FIG. 5C, the resist pattern PR1 having an opening abovethe p-MOS active region AR2 is formed. By using the resist pattern PR1as a mask, Ge ions are implanted at an acceleration energy of 100 keVand a dose of 5×10¹⁴ atoms/cm² to selectively release stresses in thesilicon nitride film 21 in the p-MOS active region AR2.

As shown in FIG. 5D, an interlayer insulating film 23 of silicon oxideor the like is formed on the silicon nitride film 21 by a well-knownprocess, and the interlayer insulating film is etched to form contactholes by using the silicon nitride film 21 as the contact etch stopperfilm and conductive plugs 25 are buried in the contact holes. Aninterlayer insulating film 27 is deposited covering the conductive plugs25, and trenches are formed and buried with a copper wiring 28. Aninterlayer insulating film 30 is formed covering the copper wiring 28,and a trench and a via hole are formed and buried with a copper wiring31. The interlayer insulating film forming process and wiring formingprocess are repeated a necessary number of times to complete a CMOSstructure. These wiring forming processes are performed by well-knowntechniques.

With this CMOS structure, since the n-MOS region is covered with thesilicon nitride film having the tensile stress, tensile stress isgenerated along the gate length direction so that the on-currentincreases. In the p-MOS region, since the tensile stress is released inthe active region, the tensile strain is generated along the gate widthdirection so that the on-current increases. The performance of bothn-MOSFET and p-MOSFET is improved and the performance of the whole CMOSis improved.

In the first embodiment, although the p-MOS region is covered with thecontact etch stopper film having the tensile stress, the stress isreleased for the active region so that the tensile strain is generatedin the channel region along the gate width direction and the on-currentof p-MOSFET increases. This effect relies mainly upon stress releasealong the gate width direction, and is not strict along the gate lengthdirection.

FIGS. 6A and 6B show an application example to a NOR type CMOS circuit.As shown in FIG. 6A, a plurality of insulated gate electrodes Gp1 andGp2 are formed traversing a laterally long p-MOS active region ARp. Theactive region between adjacent insulated gate electrodes functions asthe common source/drain region of two p-MOS transistors. A resistpattern PR2 for Ge ion implantation has an opening aligned with theactive region ARp. As shown in FIG. 6B, Ge ions are implanted into theactive region ARp by using a resist pattern PR2 opening a plurality ofcoupled p-MOS transistors.

FIGS. 6C and 6D show a first modification of the first embodiment. Whentwo p-MOS active regions ARp1 and ARp2 are juxtaposed along the gatelength direction, the element isolation region therebetween may becovered with a resist region, or may be exposed in the opening as shown.A resist pattern PR3 is formed which exposes or opens the juxtaposed twop-MOS active regions ARp1 and Arp2 and covers the element isolationregion 12 with respect to the gate width direction. As shown in FIG. 6D,Ge ions are implanted by using the resist pattern PR3 as a mask. Sincethe tensile stress above the active regions ARp1 and ARp2 is released,the tensile strain is not generated in the channel region along the gatelength direction. The tensile stress left above the element isolationregion 12 along the gate width direction exerts the tensile strain onthe channel region along the gate width direction so that the on-currentincreases.

FIGS. 6E and 6F show a second modification of the first embodiment. Aresist pattern PR3 opening the p-MOS active region AR2 also partiallyopens the element isolation region 12 along the gate length direction.Even by this resist pattern, the tensile stress above the active regionis released by Ge ion implantation and the tensile stress film left onthe element isolation region 12 along the gate width direction exertsthe tensile strain on the channel region.

FIGS. 7A to 7D are schematic cross sectional views and a plan viewshowing the structure of a semiconductor device of the second embodimentand its main manufacture processes. As shown in FIG. 7A, by theprocesses similar to those of the first embodiment, the constituentelements are formed including: an element isolation region 12 by shallowtrench isolation (STI) defining active regions AR1 and AR2 in thesurface layer of a (001) plane p-type silicon substrate 11; a p-well 13,an n-well 14; and an insulated gate electrode G (Gn, Gp) constituted ofa gate insulating film 15 and a polysilicon layer. Impurities of n- andp-types are selectively implanted into the active region on both sidesof the insulated gate electrode G to form an n-type extension Exn and ap-type extension Exp, and side wall spacers SW are formed on the sidewalls of the insulated gate electrode G.

By using the side wall spacers SW as a mask, n-type and p-type impurityions are selectively implanted to form an n-type gate electrode Gn andan n-type source/drain diffusion layer 18 of an n-MOS and a p-type gateelectrode Gp and a p-type source/drain diffusion layer 19 of a p-MOS. Ifnecessary, a metal layer such as Co capable of being silicidated isdeposited and a silicidation process is performed to form silicidelayers on the gate electrode G and source/drain diffusion layers. Theseprocesses are similar to those of the first embodiment.

In the second embodiment, a silicon nitride film 21 having a tensilestress is formed in the n-MOS region and a silicon nitride film 32having a compressive stress is formed in the p-MOS region.

The silicon nitride film 32 having a compressive stress is deposited onthe silicon substrate, covering the insulated gate electrodes Gn and Gp.For example, the silicon nitride film 32 having the compressive stressof about 1.4 GPa is deposited to a thickness of about 80 nm by PECVDunder the conditions that SiH₄ is flowed at 100 to 1000 sccm as siliconsource gas, NH₃ is flowed at 500 to 10000 sccm as nitrogen source gas,and Ar+N₂ are flowed at 500 to 10000 sccm as other gasses, at a pressureof 0.1 to 400 torr and an RF power of 100 to 1000 W.

By covering the p-MOS region with a resist pattern, the compressivestress silicon nitride film 32 in the n-MOS region is removed. Next, thesilicon nitride film 21 having a thickness of about 80 nm and a tensilestress of 1.4 GPa is formed by thermal CVD like the first embodiment. Bycovering the n-MOS region with a resist pattern, the exposed tensilestress silicon nitride film 21 in the p-MOS region is removed. In thismanner, the structure shown in FIG. 7A is obtained. The silicon nitridefilm 21 having the tensile stress may be formed first and the tensilestress silicon nitride film 21 in the p-MOS region is removed, and thenthe silicon nitride film 32 having the compressive stress is depositedand the compressive stress silicon nitride film 32 in the n-MOS regionmay be removed.

As shown in FIG. 7B, a resist pattern PR4 is formed which covers thewhole n-MOS region and the active region in the p-MOS region. Theelement isolation region 12 in the p-MOS region is therefore exposed.

As shown in FIGS. 7C and 7D, Ge ions are implanted at an accelerationenergy of 100 keV and a dose of 5×10¹⁴ atoms/cm² to release thecompressive stress in the compressive stress silicon nitride film 32 onthe element isolation region 12 in the p-MOS region. FIG. 7C is a crosssectional view taken along the gate length direction and FIG. 7D is across sectional view taken along the gate width direction.

The compressive stress silicon nitride film 32 left on the active regionAR2 in the p-MOS region exerts the compressive stress on the channelregion under the insulated gate electrode Gp along the gate lengthdirection. Since the compressive stress above the element isolationregion along the gate width direction is released, the extending forceof the compressive stress silicon nitride film 32 selectively left onthe active region AR2 generates the tensile strain along the gate widthdirection so that the on-current of the p-MOS transistor increases.

According to the second embodiment, the n-MOS transistor is similar tothat of the first embodiment. The p-MOS region is covered with thecontact etch stopper film having the compressive stress and the stressabove the element isolation region is released. Therefore, thecompressive strain is generated in the channel region of the p-MOSregion along the gate length direction and the tensile strain isgenerated along the gate width direction. It is expected that theperformance of the p-MOS transistor is improved further.

FIGS. 8A and 8B show an application example to a NOR type CMOS circuit.As shown in FIG. 8A, a plurality of insulated gate electrodes Gp1 andGp2 are formed traversing a laterally long p-MOS active region ARp. Aresist pattern PR5 for Ge ion implantation exposes the element isolationregion in the p-MOS region. As shown in FIG. 8B, by using the resistpattern PR5 masking a plurality of couples p-MOS transistors, Ge ionsare implanted into the element isolation region 12.

FIGS. 8C and 8D show a first modification of the second embodiment. Whentwo p-MOS active regions ARp1 and ARp2 are juxtaposed along the gatelength direction, the element isolation region therebetween may becovered with a resist region, or may be exposed or opened as shown. Aresist pattern PR6 is formed which covers the juxtaposed two p-MOSactive regions ARp1 and ARp2 with respect to the gate width direction.As shown in FIG. 8D, Ge ions are implanted by using the resist patternPR6 as a mask. Since the compressive stress above the element isolationregion 12 outside of the active regions ARp1 and ARp2 is released, thetensile strain is generated in the channel region along the gate widthdirection.

FIGS. 8E and 8F show a second modification of the second embodiment. Aresist pattern PR7 covering the p-MOS active region AR2 is removed inthe element isolation region 12 along the gate width direction. However,the resist pattern PR7 extends on the element isolation region 12 alongthe gate length direction. Even with this resist pattern, thecompressive stress above the element isolation region is released by Geion implantation and the compressive strain along the gate lengthdirection and the tensile strain along the gate width direction aregenerated in the channel region.

FIGS. 9A to 9D are schematic cross sectional views and a plan viewshowing the structure of a semiconductor device of the third embodimentand its main manufacture processes. As shown in FIG. 9A, by theprocesses similar to those of the first embodiment, the constituentelements are formed including: an element isolation region 12 by shallowtrench isolation (STI) defining active regions AR1 and AR2 in thesurface layer of a (001) plane p-type silicon substrate 11; a p-well 13,an n-well 14; and an insulated gate electrode G (Gn, Gp) constituted ofa gate insulating film 15 and a polysilicon layer 16. Impurities of n-and p-types are selectively implanted into the active region on bothsides of the insulated gate electrode G to form an n-type extension Exnand a p-type extension Exp, and side wall spacers SW are formed on theside walls of the insulated gate electrode G.

By using the side wall spacers SW as a mask, n-type and p-type impurityions are selectively implanted to form an n-type gate electrode Gn andan n-type source/drain diffusion layer 18 of an n-MOSFET and a p-typegate electrode Gp and a p-type source/drain diffusion layer 19 of ap-MOSFET. If necessary, a metal layer such as Co capable of beingsilicidated is deposited and a silicidation process is performed to formsilicide layers on the gate electrode G and source/drain diffusionlayers 18 and 19. A silicon nitride film 21 having a tensile stress isformed in the n-MOS region and a silicon nitride film 32 having acompressive stress is formed in the p-MOS region. These processes aresimilar to those of the second embodiment.

As shown in FIG. 9B, a resist pattern PR8 is formed which covers thewhole n-MOS region and the active region in the p-MOS region. Theelement isolation region 12 in the p-MOS region is therefore exposed. Asshown in FIGS. 9C and 9D, the compressive stress silicon nitride film 32is etched to release the compressive stress in the compressive stresssilicon nitride film 32 in the element isolation region 12 in the p-MOSregion. FIG. 9C is a cross sectional view taken along the gate lengthdirection and FIG. 9D is a cross sectional view taken along the gatewidth direction. The compressive stress silicon nitride film 32 left onthe active region AR2 in the p-MOS region exerts the compressive stresson the channel region under the insulated gate electrode Gp along thegate length direction.

Since the compressive stress above the element isolation region alongthe gate width direction is released, the extending force of thecompressive stress silicon nitride film 32 selectively left on theactive region AR2 exerts a force directing toward the outside so thatthe tensile strain along the gate width direction is generated and theon-current of the p-MOS transistor increases.

According to the third embodiment, the n-MOS transistor is similar tothat of the first embodiment. The compressive strain is generated in thechannel region of the p-MOS region along the gate length direction andthe tensile strain is generated along the gate width direction. It isexpected that the performance of the p-MOS transistor is improvedfurther.

FIGS. 10A to 10D are schematic cross sectional views and a plan viewshowing the structure of a semiconductor device of the fourth embodimentand its main manufacture processes.

As shown in FIG. 10A, an n-MOSFET and a p-MOSFET are formed on asemiconductor substrate 11 by the processes similar to those of theabove-described embodiments. A contact etch stopper film 32 of a siliconnitride film having a compressive stress is formed on the semiconductorsubstrate.

FIG. 10B is a plan view of the semiconductor substrate as viewed fromthe upper position. An element isolation region 12 by STI defines ann-MOS active region AR1 and a p-MOS active region AR2. Gate electrodestructures Gn and Gp are formed traversing the active regions AR1 andAR2.

As shown in FIG. 10C, a compressive stress film 32 is formed on thewhole surface of the semiconductor substrate, covering the gateelectrode structures. A resist pattern is formed on the compressivestress film 32. The resist pattern PR9 is formed only in the p-MOSactive region AR2.

As shown in FIGS. 10C and 10D, by using the resist pattern PR9 as amask, Ge ions are implanted. FIG. 10C is a cross sectional view takenalong the gate length direction and FIG. 10D is a cross sectional viewtaken along the gate width direction.

In the n-MOS region, the stress in the contact etch stopper film isreleased so that a reduction in the on-current to be caused by thecompressive stress can be suppressed. In the p-MOS region, only thestress above the element isolation region 12 is released. Thecompressive stress film left on the active region tends to extendoutward. The compressive stress is exerted along the gate lengthdirection, and the tensile stress is exerted along the gate widthdirection. Therefore, the on-current of the p-MOSFET increases.

FIGS. 11A to 11C are schematic cross sectional views and a plan viewshowing the structure of a semiconductor device of the fifth embodiment.FIGS. 11A and 11B are cross sectional views taken along the gate lengthdirection and gate width direction, and FIG. 11C is a plan view. In thisembodiment, a contact etch stopper film 32 of a compressive stress filmis formed only in the p-MOS region, and a contact etch stopper film 21of a tensile stress film is formed in the whole n-MOS region and on theelement isolation region in the p-MOS region.

In an n-MOSFET, the tensile stress is exerted along the gate lengthdirection so that the on-current increases. In a p-MOSFET, it can beconsidered that stresses in the compressive film 32 on the elementisolation region are released and stresses in the tensile stress film 21in the active region are released. Namely, the contact etch stopperfilms 21 and 32 exert a force of extending outward at the periphery ofthe active region. Therefore, the p-MOSFET receives the compressivestress along the gate length direction and the tensile stress along thegate width direction and increases the on-current.

FIG. 12 is a table summarizing the features of the above-described fiveembodiments. In order to exert the tensile stress along the gate lengthdirection of an n-MOSFET, it is necessary to form a tensile stress filmon the active region. If the stress above the element isolation regionis released, the compressive stress is exerted along the gate widthdirection. Since this is not preferable, the stress released region is“none”. The stress is not exerted along the gate width direction. Theembodiments E1, E2, E3 and E5 correspond to this arrangement.

In the embodiment E4, since the compressive stress in the compressivestress film is released in the whole region, stress will not be exertedin the n-MOS region. A decrease in the on-current to be caused by thecompressive stress is prevented.

In order to exert the tensile stress on an n-MOSFET along the gate widthdirection, if the tensile stress film is used, the stress above theactive region is released. However, in this case, the stress along thegate length direction is “none” and the effects are cancelled out. Ifthe compressive stress film is used, the stress above the elementisolation region is released. However, in this case, if the compressivestress film is left on the active region, the compressive stress isexerted along the gate length direction and the effects are cancelledout. In the embodiments, this arrangement is not adopted.

In order to exert the compressive stress on a p-MOSFET along the gatelength direction, it is necessary to form the compressive stress film atleast on the active region. The embodiments E2, E3, E4 and E5 adopt thisarrangement.

In order to exert the tensile stress along the gate width direction, ifthe tensile film is used, the stress above the active region isreleased. The embodiments E1 and E5 adopt this arrangement. If thecompressive stress film is used, the stress above the element isolationregion is released. The embodiments E2, E3, E4 and E5 adopt thisarrangement.

The embodiment E1 uses only the tensile stress film. In an n-MOSFET, thetensile stress is exerted along the gate length direction, and in ap-MOSFET, the tensile stress is exerted along the gate width direction.

The embodiment E4 uses only the compressive stress film. In a p-MOSFET,the compressive stress is exerted along the gate length direction andthe tensile stress is exerted along the gate width direction. In ap-MOSFET, however, the stress is not exerted. The other embodiments E2,E3 and E5 use the tensile stress film and compressive stress film. In ann-MOSFET, the tensile stress is exerted along the gate length direction,and in a p-MOSFET, the compressive stress is exerted along the gatelength direction and the tensile stress is exerted along the gate widthdirection.

With these arrangements, although the on-current of CMOSFET can beimproved, the exposure process is additionally used. From this reason,some restrictions of the layout may occur. For example, If thearrangements of the above-described embodiments are applied to a static(S) RAM, the area of SRAM is broadened in some cases. Thecharacteristics of an input/output circuit are required to have the sameperformance as that of the already existing devices.

FIG. 13 is a schematic plan view showing the structure of asemiconductor integrated circuit device. The semiconductor integratedcircuit device has in its chip 11 a logical circuit 41, an SRAM circuit42 and an input/output (I/O circuit) 43. The stress film structure ofthe above-described embodiments is applied only to the logical circuit41 and is not applied to the input/output circuit 43 and SRAM circuit42.

The present invention has been described in connection with thepreferred embodiments. The invention is not limited only to the aboveembodiments. For example, although the silicon nitride film is used asthe stress film, the invention is not limited thereto, but anydielectric film capable of exerting a stress can be used. Well-knownvarious structures may be adopted to the structure of CMOSFET. It willbe apparent to those skilled in the art that other variousmodifications, improvements, combinations, and the like can be made.

1. A semiconductor device comprising: a semiconductor substrate having ap-channel type transistor region; an element isolation region formed ina surface portion of said semiconductor substrate, said elementisolation region defining a p-channel type active region in saidp-channel type transistor region; a p-channel type gate electrodestructure formed above said semiconductor substrate, traversing saidp-channel type active region and defining a p-channel region under saidp-channel type gate electrode structure; a first tensile stress filmselectively formed above said element isolation region in said p-channeltype transistor region; and an insulating film selectively formed abovesaid p-channel type active region and covering said p-channel type gateelectrode structure, said insulating film being made of a same film assaid first tensile stress film and releasing stress in said insulatingfilm, wherein said first tensile stress film above said elementisolation region in said p-channel type transistor region exerts atensile stress on said p-channel region along a gate width direction. 2.The semiconductor device according to claim 1, wherein said firsttensile stress film and said insulating film are made of a siliconnitride film.
 3. The semiconductor device according to claim 1 wherein:said semiconductor substrate has also an n-channel type transistorregion; said element isolation region defines an n-channel active regionin said n-channel type transistor region; and the semiconductor devicefurther comprises: an n-channel type gate electrode structure formedabove said semiconductor substrate, traversing said n-channel typeactive region and defining an n-channel region under said n-channel typegate electrode structure; and a second tensile stress film formed abovesaid n-channel type transistor region and covering said n-channel typegate electrode structure, said second tensile stress film being made ofa same film as said first tensile stress film.
 4. The semiconductordevice according to claim 1, wherein said semiconductor substrate is asilicon substrate having a (001) plane and the gate length direction isalong <110> direction.